The advancements in the synthesis of Selleck SRT2104 large-area graphene with high crystallinity and transfer techniques make it suitable Ferrostatin-1 cell line for its applications in solar cells [15]. In silicon solar cell, the power conversion efficiency is limited by many fundamental losses such as incomplete absorption of the solar spectrum, recombination of the photo-generated charge carriers, shading losses, and series resistance losses [16, 17]. Antireflection

coatings and passivation layers of oxides are used to overcome these losses [18, 19]. Apart from these, front surface field (FSF) is also a very important technique to passivate the front surface by introducing an electric field at the surface to enhance the performance of silicon solar cell [20]. In a number of studies, the formation of a graphene/silicon selleck chemicals llc (G/Si) junction for solar cell application has been studied. Li et al. reported the first demonstration on the G/Si solar cell with about 1.65% power conversion efficiency [21]. After that, many attempts have been made to improve the performance of graphene-based Si solar cells by modifying the work function and reducing the sheet resistance of graphene [22–25]. Although high optical transmittance and good electrical conductivity of graphene layer are well reported, there

are limited studies in which the transparent conducting property has been studied by depositing the graphene layers onto fabricated solar cells. Difficulty in transferring a uniform graphene layer onto highly textured surfaces in normally available commercial-grade Si solar cells could be one of the possible reasons for this. In this paper, we investigate the transparent conducting and surface field properties of graphene layers onto planar and untextured crystalline Si surface by carrying out experimental investigations and finite difference time domain (FDTD) calculations. In addition, the effect

of graphene layer on the photovoltaic parameters and spectral responses of planar and untextured Si solar cell has also been investigated. Methods Synthesis and transfer of graphene The growth of graphene has been carried out on a 25-μm-thick Cu foil (99.98%, Sigma-Aldrich, St. Louis, MO, USA, item no. 349208) using an acetylcholine atmospheric pressure chemical vapor deposition (APCVD) system at a temperature of 1,030°C. A split-type furnace with a quartz tube reactor was used for graphene growth. Before loading into the reaction tube, the Cu foil was cleaned in acetic acid followed by acetone, deionized water, and isopropyl alcohol to remove the copper oxide present at the surface. A mixture of Ar (500 sccm) and H2 (30 sccm) was then introduced into the reaction tube for degassing the air inside. The flow rate of Ar was kept constant (500 sccm) for all the experiments mentioned in this manuscript.